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TRIOS(R)* PHOTOTRANSISTOR OPTOCOUPLER
FEATURES * High Current Transfer Ratios SFH600-0, 40 to 80% SFH600-1, 63 to 125% SFH600-2, 100 to 200% SFH600-3, 160 to 320% * Isolation Test Voltage (1 Sec.), 5300 VACRMS * VCEsat 0.25 (0.4) V, IF=10 mA, IC=2.5 mA * High Quality Premium Device * Long Term Stability * Storage Temperature, -55 to +150C * Underwriters Lab File #E52744 V * VDE 0884 Available with Option 1
DE
SFH600 SERIES
Dimensions in inches (mm) Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
DESCRIPTION The SFH600 is an optocoupler with a GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case, 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible insulating voltage. Maximum Ratings Emitter Reverse Voltage................................................. 6 V DC Forward Current...................................... 60 mA Surge Forward Current (tp=10 s).................. 2.5 A Total Power Dissipation.............................. 100 mW Detector Collector-Emitter Voltage ................................ 70 V Emitter-Base Voltage ....................................... 7 V Collector Current........................................... 50 mA Collector Current (t=1 ms) .......................... 100 mA Power Dissipation ...................................... 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1 sec.)..............5300 VACRMS Creepage......................................................7 mm Clearance .......................................................... 7 mm Isolation Thickness between Emitter & Detector .....................................................0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1........................175 Isolation Resistance VIO=500 V, TA=25C................................... 1012 VIO=500 V, TA=100C................................. 1011 Storage Temperature Range........ -55C to +150C Ambient Temperature Range....... -55C to +100C Junction Temperature ....................................100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ....................................................260C
Characteristics (TA=25C)
Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Capacitance Collector-Emitter Collector-Base Emitter-Base Thermal Resistance Package Saturation Voltage, Collector-Emitter Coupling Capacitance VCEsat CIO 0.25 (0.4) 0.6 V pF IF=10 mA, IC=2.5 mA VIO=0, f=1 MHz pF CCE CCB CEB RTHJamb 5.2 6.5 9.5 500 f=1 MHz VCE=5 V VCB=5 V VEB=5 V VF VBR IR CO RTHJamb 1.25 (1.65) 6 0.01 (10) 25 750 V V A pF IF=60 mA IR=10 A VR=6 V VF=0 V, f=1 MHz Unit Condition
C/W
C/W
*TRIOS--TRansparent IOn Shield
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This document was created with FrameMaker 4.0.4
Current Transfer Ratio and Collector-Emitter Leakage Current by dash number
-0 IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) 40-80 -1 63125 45 (>22) 2 ( 35) -2 100200 70 (>34) 2 ( 35) -3 160320 90 (>56) 5 ( 70) Unit %
Figure 3. Current transfer ratio versus diode current (TA=-25C, VCE=5 V) IC/IF=f (IF)
30 (>13) 2 ( 35)
%
nA
Figure 1. Linear operation (without saturation)
IF RL=75 IC VCC=5 V
47
Figure 4. Current transfer ratio versus diode current (TA=0C, VCE=5 V) IC/IF=f (IF)
IF=10 mA, VCC=5 V, TA=25 C, Typical
Load Resistance Turn-On Time Rise Time Turn-Off Time Fall Time Cut-off Frequency RL tON tR tOFF tf FCO 75 3.2 2.0 3.0 2.5 250 s s s s kHz
Figure 2. Switching operation (with saturation)
IF 1 K VCC=5 V
47
Figure 5. Current transfer ratio versus diode current (TA=25C, VCE=5 V)IC/ IF=f (IF)
Typical
-0 (IF=20 mA) Turn-On Time Rise Time Turn-Off Time Fall Time tON tR tOFF tF VCESAT 3.7 2.5 19 11 -1 and -2 (IF=10 mA) 4.5 3.0 21 12 0.25 (0.4) -3 (IF=5 mA) 5.8 4.0 24 14 s s s s V
SFH600
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Figure 6. Current transfer ratio versus diode current (TA=50C) VCE=5 V IC/IF=f (IF)
Figure 9. Transistor characteristics (HFE =550) SFH600-2, -3 IC=f(VCE) (TA=25C, IF=0)
Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25C, IF=0)
Figure 7. Current transfer ratio versus diode current (TA=75C) VCE=5V IC/IF=f (IF)
Figure 10. Output characteristics SFH600-2, -3 (TA=25C) IC=f(VCE)
Figure 13. Saturation voltage versus collector current and modulation depth SFH600-0 VCEsat=f (IC) (TA=25C)
Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f(T)
Figure 11. Forward voltage VF=f (IF)
SFH600
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Figure 14. Saturation voltage versus collector current and modulation depth SFH600-1 VCEsat=f (IC) (TA=25C)
Figure 17. Permissible pulse load D=parameter, TA=25C, IF=f (tp)
Figure 20. Transistor capacitance C=f(VO) (TA=25C, f=1 MHz)
Figure 15. Saturation voltage versus collectorcurrent and modulation depth SFH600-2 VCEsat=f (IC) (TA=25C)
Figure 18. Permissible power dissipation for transistor and diode Ptot=f (TA)
Figure 16. Saturation voltage versus collectorcurrent and modulation depth SFH600-3 VCEsat=f (IC) (TA=25C)
Figure 19. Permissible forward current diode Ptot=f (TA)
SFH600
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